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PolarTM Power MOSFET HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL VISOL Md Weight 1.6mm (0.062 in.) from case for 10s 50/60 Hz, RMS IISOL 1mA Mounting torque Terminal connection torque Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150C TC = 25C
IXFN26N100P
VDSS ID25
RDS(on) trr
= 1000V = 23A 390m 300ns
Maximum Ratings 1000 1000 30 40 23 65 13 1.0 20 595 -55 ... +150 150 -55 ... +150 300 2500 3000 1.5/13 1.3/11.5 30 V V V V A A A J V/ns W C C C C V~ V~ Nm/lb.in. Nm/lb.in. g
miniBLOC, SOT-227 B (IXFN) E153432
S G
S D G = Gate S = Source D = Drain
Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal.
Features International standard package Encapsulating epoxy meets UL 94 V-0, flammability classification miniBLOC with Aluminium nitride isolation Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
t = 1min t = 1s
Advantages Easy to mount Space savings High power density Applications Switched-mode and resonant-mode power supplies DC-DC Converters Laser Drivers AC and DC motor controls Robotics and servo controls
Symbol Test Conditions (TJ = 25C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 1mA VGS = 30V, VDS = 0V VDS = VDSS VGS = 0V VGS = 10V, ID = 13A, Note 1 TJ = 125C
Characteristic Values Min. Typ. Max. 1000 3.5 6.5 200 V V nA
25 A 2.0 mA 390 m
(c)2008 IXYS CORPORATION, All rights reserved
DS99878A(4/08)
IXFN26N100P
Symbol Test Conditions (TJ = 25C unless otherwise specified) gfs Ciss Coss Crss RGi td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS 0.05 VGS = 10V, VDS = 0.5 * VDSS, ID = 13A Gate input resistance Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 13A RG = 1 (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 20V, ID = 13A, Note 1 Characteristic Values Min. Typ. Max. 13 22 11.9 690 60 1.50 45 45 72 50 197 76 85 0.21 S nF pF pF ns ns ns ns nC nC nC C/W C/W SOT-227B Outline
Source-Drain Diode TJ = 25C unless otherwise specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, pulse width limited by TJM IF = IS, VGS = 0V, Note 1 IF = 13A, -di/dt = 100A/s VR = 100V
Characteristic Values Min. Typ. Max. 26 104 1.5 300 1.2 12 A A V ns C A
Note 1: Pulse test, t 300s; duty cycle, d 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2
IXFN26N100P
Fig. 1. Output Characteristics @ 25C
28 24 20 VGS = 10V 9V 70 60 50
Fig. 2. Extended Output Characteristics @ 25C
VGS = 10V
ID - Amperes
ID - Amperes
16 12 8 4 0 0 1 2 3 4 5 6 7 8 9 8V
9V 40 30 20 10 7V 0 0 5 10 15 20 25 30
8V
7V
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics @ 125C
28 24 20 VGS = 10V 9V 3.0 2.8 2.6 2.4
Fig. 4. RDS(on) Normalized to I D = 13A Value vs. Junction Temperature
VGS = 10V
RDS(on) - Normalized
2.2 2.0 1.8 1.6 1.4 1.2 1.0 I D = 26A I D = 13A
ID - Amperes
16 12 8V 8 4 7V 0 0 2 4 6 8 10 12 14 16 18 20
0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 13A Value vs. Drain Current
2.8 2.6 2.4 VGS = 10V TJ = 125C
24 22 20 18
Fig. 6. Maximum Drain Current vs. Case Temperature
RDS(on) - Normalized
2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 5 10 15 20 25 30 35 40 45 50 55 60 65 TJ = 25C
ID - Amperes
16 14 12 10 8 6 4 2 0 -50 -25 0 25 50 75 100 125 150
ID - Amperes
TC - Degrees Centigrade
(c)2008 IXYS CORPORATION, All rights reserved
IXFN26N100P
Fig. 7. Input Admittance
40 35 30 25 20 15 10 10 5 0 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 5 0 0 5 10 15 20 25 30 35 40 TJ = 125C 25C - 40C 50 45 40
Fig. 8. Transconductance
g f s - Siemens
35 30 25 20 15 TJ = - 40C 25C 125C
ID - Amperes
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
80 70 60 16 14 12 VDS = 500V I D = 13A I G = 10mA
Fig. 10. Gate Charge
IS - Amperes
50 40 30 20 10 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 TJ = 125C TJ = 25C
VGS - Volts
10 8 6 4 2 0 0 40 80 120 160 200 240 280
VSD - Volts
QG - NanoCoulombs
Fig. 11. Capacitance
100,000
1.000
Fig. 12. Maximum Transient Thermal Impedance
f = 1 MHz
Ciss
Capacitance - PicoFarads
10,000
1,000
Coss
Z(th)JC - C / W
30 35 40
0.100
0.010
100 Crss 10 0 5 10 15 20 25
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
VDS - Volts
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: F_26N100P(86)3-28-08-B

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